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| NTST30100SG Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF = 0.39 V at IF = 5 A Features http://onsemi.com * Fine Lithography Trench-based Schottky Technology for Very Low * * * * * * Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability This is a Pb-Free Device VERY LOW FORWARD VOLTAGE, LOW LEAKAGE SCHOTTKY BARRIER RECTIFIERS 30 AMPERES, 100 VOLTS PIN CONNECTIONS 1 2, 4 3 4 Typical Applications * Switching Power Supplies including Notebook / Netbook Adapters, * * * * * * * * * ATX and Flat Panel Display High Frequency and DC-DC Converters Freewheeling and OR-ing diodes Reverse Battery Protection Instrumentation Mechanical Characteristics TO-220AB CASE 221A STYLE 6 1 Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94-0 @ 0.125 in Weight (Approximately): 1.9 grams Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Maximum for 10 sec 2 3 MARKING DIAGRAM AY WW NTST30100SG AKA A Y WW AKA G = Assembly Location = Year = Work Week = Polarity Designator = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2010 May, 2010 - Rev. 0 1 Publication Order Number: NTST30100S/D NTST30100SG MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 105C) Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 95C) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature Storage Temperature Voltage Rate of Change (Rated VR) Symbol VRRM VRWM VR IF(AV) IFRM IFSM TJ Tstg dv/dt Value 100 Unit V 30 60 250 -40 to +150 -65 to +175 10,000 A A A C C V/ms Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Rating Maximum Thermal Resistance Junction-to-Case Junction-to-Ambient Symbol RqJC RqJA Value 2.0 70 Unit C/W C/W ELECTRICAL CHARACTERISTICS Rating Maximum Instantaneous Forward Voltage (Note 1) (IF = 5 A, TJ = 25C) (IF = 10 A, TJ = 25C) (IF = 30 A, TJ = 25C) (IF = 5 A, TJ = 125C) (IF = 10 A, TJ = 125C) (IF = 30 A, TJ = 125C) Maximum Instantaneous Reverse Current (Note 1) (VR = 70 V, TJ = 25C) (VR = 70 V, TJ = 125C) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 125C) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0% IR Symbol vF Typ 0.47 0.55 0.84 0.39 0.51 0.7 27 11 70 23 1000 45 Max - - 0.95 - - 0.78 mA mA mA mA Unit V ORDERING INFORMATION Device NTST30100SG Package TO-220AB (Pb-Free) Shipping 50 Units / Rail http://onsemi.com 2 NTST30100SG TYPICAL CHARACTERISTICS 100 IF, INSTANTANEOUS FORWARD CURRENT (A) IR, INSTANTANEOUS REVERSE CURRENT (mA) 1000 100 10 1 0.1 TA = 25C 0.01 TA = 150C 10 TA = 150C TA = 25C TA = 125C 1 TA = 125C 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 20 30 40 50 60 70 80 90 100 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics 10000 C, JUNCTION CAPACITANCE (pF) TJ = 25C IF(AV), AVERAGE FORWARD CURRENT (A) 60 55 50 45 40 35 30 25 20 15 10 5 0 0 Figure 2. Typical Reverse Characteristics dc RqJC = 2.0C/W 1000 SQUARE WAVE 100 0.1 1 10 VR, REVERSE VOLTAGE (V) 100 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 Figure 3. Typical Junction Capacitance Figure 4. Current Derating, Case 45 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 40 35 30 25 20 15 10 5 0 0 IPK/IAV = 10 IPK/IAV = 20 IPK/IAV = 5 TA = 150C SQUARE WAVE dc 5 10 15 20 25 IF(AV), AVERAGE FORWARD CURRENT (A) 30 Figure 5. Forward Power Dissipation http://onsemi.com 3 NTST30100SG 10 R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (C/W) 1 50% Duty Cycle 20% 0.1 10% 5% 2% 1% Single Pulse 0.00001 0.0001 0.001 0.01 0.1 t, Pulse Time (sec) 1 10 100 1000 0.01 0.000001 Figure 6. Typical Transient Thermal Response, Junction-to-Case http://onsemi.com 4 NTST30100SG PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AF -T- B 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 ANODE CATHODE ANODE CATHODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 F T C S Q 123 A U K H Z L V G D N R J STYLE 6: PIN 1. 2. 3. 4. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 NTST30100S/D |
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